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MIL-PRF-19500-485 Semiconductor Device, Transistor, Pnp, Silicon, Low-Power Types: 2N5415, 2N5415S, 2N5415Ua, 2N5415U4, 2N5416, 2N5416S, 2N5416Ua, And 2N5416U4, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Janhcd, Jankcb, Jankcd, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And JankcbhThis specification covers the performance requirements for PNP, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/485N
1.
Chip size:
.046 x .046 inch ±.002 inch (1.1684 x 1.1684 mm ±.0508 mm).
.010 ±.0015 inch (.254 ±.0381 mm) nominal.
2.
Chip thickness:
3.
Top metal:
Aluminum 30, 000 Å minimum, 33, 000 Å nominal.
4.
Back metal:
A. Gold 3, 500 Å minimum, 5, 000 Å nominal.
5.
Backside:
Collector.
6.
Bonding pad:
B = .005 x .008 inch (.127 x .2032 mm), E = .010 x .007 inch (.254 x .1778 mm).
FIGURE 2. JANHCB and JANKCB (B-version) die dimensions.
4



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