MIL-PRF-19500-485 Semiconductor Device, Transistor, Pnp, Silicon, Low-Power Types: 2N5415, 2N5415S, 2N5415Ua, 2N5415U4, 2N5416, 2N5416S, 2N5416Ua, And 2N5416U4, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Janhcd, Jankcb, Jankcd, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And JankcbhThis specification covers the performance requirements for PNP, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/485N

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

herein.

4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the specification sheet that did not request the performance of

table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on

the first inspection lot of this revision to maintain qualification.

4.2.2 JANHC and JANKC die. Qualification for die shall be in accordance with MIL-PRF-19500.

4.3 Screening (list applicable JAN levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500

and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that

exceed the limits of table I herein shall not be acceptable.

Screen (see table

Measurement

E-IV of

MIL-PRF-19500)

JANS level

JANTX and JANTXV levels

(1) 3c

Thermal impedance method 3131 of

MIL-STD-750, see 4.3.2.

ICEX and hFE1

Not applicable.

48 hours minimum.

ICEX , hFE1

ICEX and hFE1

ĆICEX = 100 percent of initial value or

2.5 �A dc, whichever is greater;

ĆhFE1 = �15 percent of initial value.

Subgroups 2 and 3 of table I herein;

Subgroup 2 of table I herein;

ĆICEX = 100 percent of initial value

or 2.5 �A dc, whichever is greater;

ĆhFE1 = �15 percent of initial value.

ĆhFE1 = �20 percent of initial value.

(1) Shall be performed any time after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to

be repeated in screening requirements.

4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: Method 1039 of MIL-STD-750, test

condition B, VCB = 10 - 30 V dc. Power shall be applied to achieve TJ = +135�C minimum using a minimum PD = 75

percent of PT maximum rated as defined in 1.3. With approval of the qualifying activity and preparing activity,

alternate burn-in criteria (hours, bias conditions, TJ, and mounting conditions) may be used for JANTX and JANTXV

quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing site's burn-in data

and performance history will be essential criteria for burn-in modification approval.