The documentation and process conversion measures
INCH POUND
necessary to comply with this document shall be
MIL-PRF-19500/505E
completed by 22 September 2009.
22 July 2009
SUPERSEDING
MIL-PRF-19500/505D
10 January 2006
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER,
TYPES 2N6286 AND 2N6287, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, Darlington, power transistors.
Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to TO-3).
1.3 Maximum ratings at TC = +25C unless otherwise specified.
PT
Type
VCBO
VCEO
VEBO
IC
IB
TJ and TSTG
RJC
TC =
TC =
+25C (1)
+100C
C
C/W
V dc
W
W
V dc
V dc
A dc
A dc
2N6286
175
87.5
0.855
-80
-80
-7
-20
-0.5
-65 to +175
2N6287
175
87.5
0.855
-100
-100
-7
-20
-0.5
-65 to +175
(1) Derate linearly at 1.16 W/C above TC > +25C.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at https://assist.daps.dla.mil/.
AMSC N/A
FSC 5961
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