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MIL-PRF-19500-505 Semiconductor Device, Darlington Transistor, Pnp, Silicon, Power, Types 2N6286 And 2N6287, Jan, Jantx, And JantxvThis specification covers the performance requirements for PNP, Darlington, power transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/505E
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 5
Safe operating area
3053
Load condition B; (clamped inductive load);
TA = +25C; Rs = 0.1 ; tr + tf 1.0 s;
(switching)
duty cycle 2 percent; tp = 1 ms (vary to obtain IC);
RBB1 = 50 ; VBB1 = -10 V dc; RBB2 = 100 ;
VBB2 = +1.5 V dc; VCC = -25 V dc; IC = -20 A dc;
RL 2 ; L = 5 mH; (Four coils in parallel, 20 mH
windings (Triad C-48u or equivalent)).
2N6286
Clamp voltage = 80 +0, -5 V dc
2N6287
Clamp voltage = 100 +0, -5 V dc
Device fails if clamp voltage is not reached
Electrical measurements
See table I, subgroup 2
Subgroups 6 and 7
Not applicable
1/ For sampling plan, see MIL-PRF-19500.
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