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MIL-PRF-19500-505 Semiconductor Device, Darlington Transistor, Pnp, Silicon, Power, Types 2N6286 And 2N6287, Jan, Jantx, And JantxvThis specification covers the performance requirements for PNP, Darlington, power transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/505E
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 3
TA = +150C
High-temperature
operation:
Collector - emitter
3041
Bias condition A;
-5.0
mA dc
ICEX2
cutoff current
VBE = +1.5 V dc;
2N6286
VCE = -80 V dc
2N6287
VCE = -100 V dc
Collector - emitter
3071
-2.0
V dc
IC = -10 A dc; IB = -40 mA dc;
VCE(sat)3
saturated voltage
pulsed (see 4.5.1)
TA = -55C
Low-temperature operation:
150
Forward-current
3076
VCE = -3 V dc; IC = -10 A dc;
hFE4
transfer ratio
pulsed (see 4.5.1)
Subgroup 4
Pulse response:
3251
Test condition A, except test circuit
and pulse requirements in
accordance with figure 2.
s
2.0
Turn-on time
VCC = -30 V dc; IC = -10 A dc;
ton
IB = -40 mA dc
s
10
Turn-off time
toff
VCC = -30 V dc; IC = -10 A dc;
IB1 = IB2 = -40 mA dc
hfe
Magnitude of common-
8
80
3306
VCE = -3 V dc; IC = -10 A dc;
emitter small-signal short-
f = 1.0 MHz
circuit forward- current
transfer ratio
Small-signal short-circuit
300
3206
VCE = -3 V dc; IC = -10 A dc
hfe
forward-current transfer ratio
f = 1.0 kHz
400
pF
Open circuit output
3236
Cobo
VCB = -10 V dc; IE = 0;
100 kHz f 1 MHz
capacitance
See footnote at end of table.
9



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