MIL-PRF-19500-505 Semiconductor Device, Darlington Transistor, Pnp, Silicon, Power, Types 2N6286 And 2N6287, Jan, Jantx, And JantxvThis specification covers the performance requirements for PNP, Darlington, power transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/505E

* TABLE II. Group E inspection (all quality levels) - for qualification or re-qualification only.

Inspection

MIL-STD-750

Qualification and large lot

quality conformance

inspection

Method

Conditions

45 devices

Subgroup 1

c=0

Temperature cycling

1051

Test condition C, 500 cycles.

Hermetic seal

1071

Fine leak

Test conditions G or H.

Gross leak

Test conditions C or D.

End-point electrical

See table I, subgroup 2 herein.

measurements

Subgroup 2

45 devices

c=0

Intermittent operation life: VCB  10 V dc,

Intermittent life

1037

6,000 cycles.

See table I, subgroup 2 herein.

End-point electrical

measurements

Subgroup 4

Thermal impedance curves

See table E-IX of MIL-PRF-19500, group E,

subgroup 4.

Subgroup 5

Not applicable

Subgroup 6

3 devices

Electrostatic discharge

1020

(ESD)

Subgroup 8

45 devices

c=0

Reverse stability

1033

Condition B.