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MIL-PRF-19500-505 Semiconductor Device, Darlington Transistor, Pnp, Silicon, Power, Types 2N6286 And 2N6287, Jan, Jantx, And JantxvThis specification covers the performance requirements for PNP, Darlington, power transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/505E
*  4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with
table I, subgroup 2 herein.
Subgroup
Method
Condition
C2
2036
Tension: Test condition A; weight = 10 lbs; time = 15 s.
For solder die attach: VCB -10 V dc; TA 35C, 6,000 cycles.
C6
1037
For eutectic die attach: TA +35C adjust PT to achieve TJ = +150C minimum,
C6
1026
VCB -10 V dc.
*  4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-
points) shall be in accordance with table I, subgroup 2.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
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