MIL-PRF-19500-515 Semiconductor Device, Transistor, Pnp, Silicon, Power, Types 2N6378 And 2N6379, Jan, Jantx, Jantxv, And JanhcThis specification covers the performance requirements for PNP silicon, power transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and one level of product assurance for each unencapsulated device type.

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MIL-PRF-19500/515D

* TABLE II. Groups B, C, and E delta and electrical measurements. 1/ 2/ 3/ 4/ 5/

Steps

Inspection

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

ĆICEX1

100 percent of

Collector to

3041

Bias condition A; VBE = +1.5 V

initial value or 2

emitter cutoff

�A, whichever

current

is greater.

VCE = 120 V dc

2N6378

VCE = 140 V dc

2N6379

� 25 percent

ĆhFE2

Forward - current

3076

VCE = 4 V dc; IC = 20 A dc;

transfer ratio

change from

pulsed (see 4.5.1)

initial reading.

� 50 mV change

ĆVCE(sat)1

Collector to

3071

IC = 2.0 A dc; IB = 20 A dc,

emitter voltage

from previously

pulsed (see 4.5.1)

(saturated)

measured

value.

1/ See MIL-PRF-19500 for sampling plan.

2/ Devices which exceed the group A limits for this test shall not be acceptable.

3/ The delta measurements for table E-VIB (JAN, JANTX and JANTXV) of MIL-PRF-19500 are subgroup 6, see

able II herein, steps 1 and 2.

4/ The delta measurements for table E-VII of MIL-PRF-19500 are as follows:

a. Subgroup 2 and 3, see table II herein, step 1.

b. Subgroup 6, see table II herein, steps 2 and 3.

5/ The delta measurements for table E-IX of MIL-PRF-19500 are subgroups 1 and 2, see table II herein, all steps.