MIL-PRF-19500-515 Semiconductor Device, Transistor, Pnp, Silicon, Power, Types 2N6378 And 2N6379, Jan, Jantx, Jantxv, And JanhcThis specification covers the performance requirements for PNP silicon, power transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and one level of product assurance for each unencapsulated device type.

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MIL-PRF-19500/515D

* TABLE III. Group E inspection (all quality levels) for qualification or re-qualification only.

Inspection

MIL-STD-750

Sample

plan

Method

Conditions

Subgroup 1

45 devices

c=0

-55�C to +150�C, 500 cycles

Temperature cycling

1051

Hermetic seal

1071

Fine leak

Test conditions G or H

Gross leak

Test conditions C or D

Electrical measurements

Table I, subgroup 2 and table II herein.

Subgroup 2

45 devices

c=0

Test temperature = +125�C; VCB = 80 percent of

Blocking life

1048

rated; T = 1,000 hours.

Electrical measurements

Table I, subgroup 2 and table II herein.

Subgroup 4

N/A

Thermal impedance curves

See MIL-PRF-19500.

Subgroup 6

3 devices

ESD

1020

Testing not required for class 3 listing. Testing is

required for nonsensitive listing to prove

capability.

Subgroup 8

45 devices

c=0

Reverse stability

1033

Condition B.