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MIL-PRF-19500-515 Semiconductor Device, Transistor, Pnp, Silicon, Power, Types 2N6378 And 2N6379, Jan, Jantx, Jantxv, And JanhcThis specification covers the performance requirements for PNP silicon, power transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and one level of product assurance for each unencapsulated device type.

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MIL-PRF-19500/515D
Dimensions
Ltr
Inches
Millimeters
Min
Max
Min
Max
A
.231
.235
5.87
5.97
C
.231
.235
5.87
5.97
NOTES:
1.
Dimensions are in inches.
* 2.
Millimeters are given for general information only.
Unless otherwise specified, tolerance is ±.005 inches (0.13 mm).
3.
4.
The physical characteristics of the die are:
Thickness: .008 inch (0.20 mm) to .012 inch (0.30 mm).
Top metal: Aluminum 40,000 Å minimum, 50,000 Å nominal.
Back metal: Gold 2,500 Å minimum, 3,000 Å nominal.
Back side: Collector.
Bonding pad: B = .016 inch (0.41 mm) x .060 inch (1.52 mm).
E = .016 inch (0.41 mm) x .070 inch (1.78 mm).
FIGURE 2 Physical dimensions JANHC die.
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