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MIL-PRF-19500-515 Semiconductor Device, Transistor, Pnp, Silicon, Power, Types 2N6378 And 2N6379, Jan, Jantx, Jantxv, And JanhcThis specification covers the performance requirements for PNP silicon, power transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and one level of product assurance for each unencapsulated device type.

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MIL-PRF-19500/515D
* TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
ZθJX
Thermal impedance 2/
3131
See 4.3.3
°C/W
*
Collector to emitter
3011
Bias condition D, IC = 50 mA dc;
V(BR)CEO
breakdown voltage
pulsed (see 4.5.1)
2N6378
100
V dc
2N6379
120
V dc
µA dc
Collector to emitter
ICEO
50
3041
Bias condition D
cutoff current
VCE = 50 V dc
2N6378
VCE = 70 V dc
2N6379
µA dc
Collector to emitter cutoff
3041
Bias condition A; VBE = 1.5 V dc
ICEX1
10
current
2N6378
VCE = 120 V dc
2N6379
VCE = 140 V dc
µA dc
Emitter-base cutoff current
3061
Bias condition D, VEB = 6 V dc
IEBO
100
µA dc
Collector to base cutoff
10
ICBO
3036
Bias condition D,
current
VCB = 120 V dc
2N6378
VCB = 140 V dc
2N6379
50
hFE1
Forward-current transfer ratio
3076
VCE = 4 V dc; IC = 1 A dc;
pulsed (see 4.5.1)
Forward-current transfer ratio
3076
VCE = 4 V dc; IC = 20 A dc;
hFE2
30
120
pulsed (see 4.5.1)
10
hFE3
Forward-current transfer ratio
3076
VCE = 4 V dc; IC = 50 A dc;
pulsed (see 4.5.1)
1.0
V dc
VCE(sat)1
Collector to emitter saturated
3071
IC = 20 A dc; pulsed (see 4.5.1)
voltage
IB = 2.0 A dc
3.0
V dc
VCE(sat)2
3071
IC = 50 A dc; IB = 10 A dc;
Collector to emitter saturated
voltage
pulsed (see 4.5.1)
1.8
V dc
VBE(sat)
Base -emitter saturated
3066
Test condition A; IC = 20 A dc; IB =
voltage
2.0 A dc; pulsed (see 4.5.1)
See footnote at end of table.
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