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MIL-PRF-19500-515 Semiconductor Device, Transistor, Pnp, Silicon, Power, Types 2N6378 And 2N6379, Jan, Jantx, Jantxv, And JanhcThis specification covers the performance requirements for PNP silicon, power transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and one level of product assurance for each unencapsulated device type.

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MIL-PRF-19500/515D

* TABLE I. Group A inspection - Continued.

Inspection 1/

MIL-STD-750

Symbol

Limit

Unit

Method

Conditions

Min

Max

Subgroup 3

TA = +150�C

High-temperature operation:

Collector to emitter cutoff

3041

ICEX2

1.0

mA dc

Bias condition A; VBE = -1.5 V dc

current

VCE = 120 V dc

2N6378

VCE = 140 V dc

2N6379

TA = -55�C

Low-temperature operation:

Forward-current transfer

3076

hFE4

VCE = 4.0 V dc IC = 20 A dc;

ratio

pulsed (see 4.5.1)

Subgroup 4

Pulse response:

3251

Test condition A, except test circuit and

pulse requirements in accordance with

figure 3 herein.

�s

0.5

ton

Turn-on time

VCC = approximately 80 V dc;

IC = 20 A dc; IB = 2.0 A dc;

�s

1.05

Turn-off time

VCC = approximately 80 V dc;

toff

IC = 20 A dc; IB1 = IB2 = 2.0 A dc

|hfe|

Magnitude of common

3306

VCE = 10 V dc; IC = 1 A dc; f = 10 MHz

emitter small-signal short-

circuit forward- current

transfer ratio

1500

3236

VCB = 10 V dc; IE = 0;

Cobo

Open capacitance

(open circuit)

0.1 MHz < f < 1.0 MHz

Subgroup 5

TC = +25�C t = 1 s; 1 cycle;

Safe operating area

3051

(dc operation)

(See figure 4)

Test 1

(Both device types)

VCE = 5 V dc; IC = 50 A dc

Test 1

(Both device types)

VCE = 8.6 V dc; IC = 29 A dc

See footnote at end of table.