MIL-PRF-19500-515 Semiconductor Device, Transistor, Pnp, Silicon, Power, Types 2N6378 And 2N6379, Jan, Jantx, Jantxv, And JanhcThis specification covers the performance requirements for PNP silicon, power transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and one level of product assurance for each unencapsulated device type.

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MIL-PRF-19500/515D

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with

subgroup 2 of table I herein. Delta measurements shall be in accordance with table II herein.

Method

Condition

Subgroup

2036

Test condition A, weight = 10 pounds; time = 15 s.

See 4.3.3, RθJC = 0.7�C/W.

3131

For solder die attach: VCE ≥ 20 V dc, 6,000 cycles.

1037

For eutectic die attach: VCE ≥ 20 V dc adjust PT to achieve TJ = +175�C

1026

minimum.

* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-

points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table

II herein.

4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.