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MIL-PRF-19500-516 Semiconductor Device, Diode Silicon, Bipolar Transient Voltage Suppressor, Types 1N6102 Through 1N6137, 1N6102A Through 1N6137A, 1N6138 Through 1N6173, 1N6138A Through 1N6173A, 1N6102Us Through 1N6137Us, 1N6102Aus Through 1N6137Aus, 1N6138Us Through 1N6173Us, 1N6138Aus Through 1N6173Aus, 1N6102Urs Through 1N6137Urs, 1N6102Aurs Through 1N6137Aurs, 1N6138Urs Through 1N617...This specification covers the performance requirements for bipolar 500 watt and 1,500 watt peak pulse power transient voltage suppressor diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. The suffix "A" denotes a five percent voltage tolerance.

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MIL-PRF-19500/516F

TABLE I. Group A inspection.

MIL-STD-750

Limit

Symbol

Unit

Inspection 1/

Method

Conditions

Min

Max

Subgroup 1

Visual and

2071

mechanical

examination

Subgroup 2 2/

�A dc

ID1

DC method, VR = VRWM

Column 5

Reverse current

4016

of table II

leakage

(column 4 of table II herein)

tp ≤ 300 ms, duty cycle ≤ 2 percent

V(BR)1

Breakdown voltage

4022

Column 2

V dc

of table II

I(BR) = column 3 of table II herein

Subgroup 3 2/

TA = +150�C

High temperature

operation

�A dc

ID2

DC method, VR = VRWM

Reverse current

4016

Column 9

leakage

of table II

(column 4 of table II herein)

Subgroup 4 2/

tp = 1 ms (see 4.5.3 and 4.5.4),

VC(MAX)

Column 6

V (pk)

Clamping voltage

of table II

maximum (pulsed)

Ip = column 7 of table II herein

Subgroups 5 and 6

Not applicable

1/ For sampling plan, see MIL-PRF-19500.

2/ All electrical testing shall be performed twice, once in each direction.