MIL-PRF-19500-516 Semiconductor Device, Diode Silicon, Bipolar Transient Voltage Suppressor, Types 1N6102 Through 1N6137, 1N6102A Through 1N6137A, 1N6138 Through 1N6173, 1N6138A Through 1N6173A, 1N6102Us Through 1N6137Us, 1N6102Aus Through 1N6137Aus, 1N6138Us Through 1N6173Us, 1N6138Aus Through 1N6173Aus, 1N6102Urs Through 1N6137Urs, 1N6102Aurs Through 1N6137Aurs, 1N6138Urs Through 1N617...This specification covers the performance requirements for bipolar 500 watt and 1,500 watt peak pulse power transient voltage suppressor diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. The suffix "A" denotes a five percent voltage tolerance.

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MIL-PRF-19500/516F

3.4.2 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.

Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. The part number may be reduced to J610X,

JX610X, JV610X or JS610X. Polarity marking is not required.

* 3.5.1 Marking of US and URS version devices. At the option of the manufacturer, US and URS version devices

may include laser marking on an end-cap, to include part number and lot date code for all levels. JANS levels shall

also include serialization. The prefixes JAN, JANTX, JANTXV, or JANS may be abbreviated as J, JX, JV, or JS,

respectively. (For example: The part number may be reduced to JS6102A). All marking which is omitted from the

body of the device shall appear on the initial container. All device marking, except for polarity and serial numbers,

shall also appear on the unit package used as the initial protection for delivery.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, table I, and table II.

3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in tables I and II.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3)

c. Conformance inspection (see 4.4).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. A separate

qualification shall be required for the 500-watt and 1,500-watt peak pulse power device, respectively.

4.2.1 JANHC and JANKC die. JANHC and JANKC die shall be qualified in accordance with MIL-PRF-19500.

4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the specification sheet that did not require the performance of

table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on

the first inspection lot of this revision to maintain qualification.