An Integrated Publishing, Inc. Site

An Integrated Publishing Website

MIL-PRF-19500-523 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington Types 2N6383, 2N6384, 2N6385, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon, power Darlington transistors. Three levels of product assurance are provided for each device type as specified in MIL┬ûPRF┬û19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14

MIL�PRF�19500/523D

TABLE I. Group A inspection � Continued.

MIL�STD�750

Symbol

Limit

Inspection 1/

Unit

Method

Conditions

Min

Max

Subgroup 5

TC = +25�C; t = 1.0 s, 1 cycle

Safe operating area

3051

(continuous dc)

See figure 3

Test 1

VCE = 10 V dc; IC = 10 A dc

(All device types)

Test 2

VCE = 30 V dc; IC = 3.33 A dc

(All device types)

Test 3

VCE = 40 V dc, IC = 1.5 A dc

2N6383

VCE = 60 V dc, IC = 0.4 A dc

2N6384

VCE = 80 V dc, IC = 0.16 A dc

2N6385

Electrical measurements

See of table I, subgroup 2 herein

Safe operating area

3053

Load condition C (unclamped

(switching)

inductive load), see figure 4.

TC = 25�C, duty cycle ≤ 10 percent

RS = 0.1Ω

Test 1

tp approximately 1 ms (vary to

obtain IC);

RBB1 = 1 kΩ; VBB1 = 10 V dc;

RBB2 = ∞; VBB2 = 0 V;

VCC = 30 V dc; IC = 10 A dc;

RL ≤ 0.5 Ω; L = 1 mH at 10 A dc

Electrical measurements

See subgroup 2 of this table

Test 2

tp approximately 1 ms (vary to

obtain IC);

RBB1 = 10 KΩ; VBB1 = 10 V dc;

RBB2 = ∞; VBB2 = 0 V;

VCC = 30 V dc; IC = 0.2 A dc;

L = 100 mH at 0.2 A dc; RL ≤ 0.5 Ω

Electrical measurements

See of table I, subgroup 2 herein

See footnotes at end of table.