An Integrated Publishing, Inc. Site

An Integrated Publishing Website

MIL-PRF-19500-523 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington Types 2N6383, 2N6384, 2N6385, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon, power Darlington transistors. Three levels of product assurance are provided for each device type as specified in MIL┬ûPRF┬û19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14

MIL�PRF�19500/523D

TABLE I. Group A inspection � Continued.

MIL�STD�750

Symbol

Limit

Inspection 1/

Unit

Method

Conditions

Min

Max

Subgroup 2 � Continued.

IC = 5.0 A dc, IB = 10 mA dc,

VCE(sat)1

Saturation voltage and

3071

2.0

V dc

resistance

pulsed (see 4.5.1)

IC = 10 A dc, IB = 0.1 A dc,

VCE(sat)2

Saturation voltage and

3071

3.0

V dc

resistance

pulsed (see 4.5.1)

VCE = 3 V dc, IC = 5 A dc;

hFE1

Forward-current

3076

1,000

20,000

transfer ratio

pulsed (see 4.5.1)

VCE = 3.0 V dc, IC = 10 A dc,

hFE2

Forward current

3076

100

transfer ratio

pulsed (see 4.5.1)

Subgroup 3

TA = +150�C

High temperature operation:

Bias condition A, VBE = 1.5 V dc

ICEX2

Collector to emitter

3041

3.0

mA dc

cutoff current

VCE = 40 V dc

2N6383

VCE = 60 V dc

2N6384

VCE = 80 V dc

2N6385

TA = �55�C

Low temperature operation:

VCE = 3.0 V dc, IC = 5.0 A dc,

hFE3

Forward-current

3076

200

transfer ratio

pulsed (see 4.5.1)

Subgroup 4

Pulse response

3251

Test condition A, except test

circuit and pulse requirements in

accordance with figure 2

�s

VCC = 30 V dc, IC = 5.0 A dc,

ton

Turn-on time

2.5

IB1 = 20 mA dc

�s

VCC = 30 V dc, IC = 5.0 A dc,

toff

Turn-off time

IB1 = � IB2 = 20 mA dc

VCE = 5 V dc; IC = 1 A dc

Magnitude of small-signal

3306

300

|hfe|

short-circuit forward-current

f = 1.0 MHz

transfer ratio

VCB = 10 V dc; IE = 0

Open-circuit output

3236

200

Cobo

100 kHz ≤ f ≤ 1 MHz

capacitance

See footnotes at end of table.