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MIL-PRF-19500-523 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington Types 2N6383, 2N6384, 2N6385, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon, power Darlington transistors. Three levels of product assurance are provided for each device type as specified in MIL┬ûPRF┬û19500.

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MIL�PRF�19500/523D

TABLE I. Group A inspection � Continued.

MIL�STD�750

Symbol

Limit

Inspection 1/

Unit

Method

Conditions

Min

Max

Subgroup 5 � Continued.

Safe operating area

3053

Load condition B (clamped

(switching)

inductive load) see figure 5

TA = +25�C, tr + tf ≤ 1.0 �s,

duty cycle ≤ 10 percent; tp = 5 ms

(vary to obtain IC) Rs = 0.1 Ω;

VCC = 10 V dc; IC = 10 A dc

2N6383

Clamp voltage = 40 V dc

2N6384

Clamp voltage = 60 V dc

2N6385

Clamp voltage = 80 V dc

Device fails if clamp voltage is not

reached

Electrical measurements

See of table I, subgroup 2 herein

For sampling plan see MIL�PRF�19500.

TABLE II. Group E inspection (all quality levels) � for qualification and re-qualification only.

MIL�STD�750

Inspection

Sample plan

Method

Conditions

45 devices; c = 0

Subgroup 1

Temperature cycling

1051

Test condition G, 500 cycles.

(air to air)

Hermetic seal

1071

Fine leak

Gross leak

Electrical measurements

See of table I, subgroup 2 herein.

Subgroup 2

45 devices; c = 0

Test temperature = +125�C; VCB = 80 percent

Blocking life

1048

of rated voltage; T = 1,000 hours.

Electrical measurements

See of table I, subgroup 2 herein.

Subgroup 4

Sample size N/A

Thermal impedance curves

See MIL�PRF�19500.

Subgroup 8

45 devices; c = 0

Reverse voltage leakage

1033

Condition A.

stability