MIL-PRF-19500-523 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington Types 2N6383, 2N6384, 2N6385, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon, power Darlington transistors. Three levels of product assurance are provided for each device type as specified in MIL┬ûPRF┬û19500.

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MIL�PRF�19500/523D

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table E�VII of MIL�PRF�19500 and as follows. Electrical measurements (end-

points) shall be in accordance with table I, subgroup 2 herein.

Subgroup

Method

Conditions

2036

Test condition A; weight = 10 pounds (4.54 Kg); time = 15 s.

3131

Thermal resistance, see 4.3.1, RθJC(max) = 1.75�C/W.

Intermittent operation life, For solder die attach: VCB ≥ 10 V dc, 6,000 cycles,

1037

TA ≤ +35�C.

Steady state life, For eutectic die attach: VCB ≥ 10 V dc, TA ≤ +35�C adjust PT to

1026

achieve TJ = +150�C minimum.

4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in appendix E, table E�IX of MIL�PRF�19500 and as specified in table II herein.

Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein.

4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse response measurements. Conditions for pulse response measurement shall be as specified in section