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MIL-PRF-19500-523 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington Types 2N6383, 2N6384, 2N6385, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon, power Darlington transistors. Three levels of product assurance are provided for each device type as specified in MIL–PRF–19500.

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MIL­PRF­19500/523D
NOTES:
1.  The rise time (tr) and fall time (tf) of the applied pulse shall be each < 20 nanoseconds;
duty cycle < 2 percent, generator source impedance shall be 50 Ω; pulse width = 20 µs.
2.  Output sampling oscilloscope: ZIN > 100 kΩ; CIN < 50 pF; rise time < 2 nanoseconds.
3.  Pulse In shall be 10 V maximum.
FIGURE 2. Pulse response test circuit.
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