An Integrated Publishing, Inc. Site

An Integrated Publishing Website

MIL-PRF-19500-523 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington Types 2N6383, 2N6384, 2N6385, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon, power Darlington transistors. Three levels of product assurance are provided for each device type as specified in MIL┬ûPRF┬û19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14

MIL�PRF�19500/523D

TABLE I. Group A inspection.

Limit

MIL�STD�750

Inspection 1/

Symbol

Unit

Method

Conditions

Min

Max

Subgroup 1

Visual and mechanical

2071

examination

Subgroup 2

Thermal impedance 2/

3131

See 4.3.1

�C/W

ZθJX

Bias condition D, IC = 200 mA dc,

V(BR)CEO

Breakdown voltage

3011

collector to emitter

pulsed (see 4.5.1)

2N6383

V dc

2N6384

V dc

2N6385

V dc

Bias condition B, IC = 200 mA dc,

V(BR)CER

Breakdown voltage

3011

RBB = 100Ω, pulsed (see 4.5.1)

collector to emitter

2N6383

V dc

2N6384

V dc

2N6385

V dc

ICEO

Collector to emitter

3041

Bias condition D

1.0

cutoff current

VCE = 40 V dc

2N6383

VCE = 60 V dc

2N6384

VCE = 80 V dc

2N6385

Bias condition D, VEB = 5.0 V dc

IEBO

Emitter to base cutoff current

3061

5.0

�A dc

Bias condition A, VBE = 1.5 V dc

ICEX1

Collector to emitter

3041

100

cutoff current

VCE = 40 V dc

2N6383

VCE = 60 V dc

2N6384

VCE = 80 V dc

2N6385

ICBO1

Collector to base

3036

Bias condition D

1.0

mA dc

cutoff current

VCE = 40 V dc

2N6383

VCE = 60 V dc

2N6384

VCE = 80 V dc

2N6385

VBE(on)1

Base emitter voltage

3066

Test condition B

2.8

V dc

VCE = 3.0 V dc, IC = 5.0 A dc

(unsaturated)

VBE(on)2

Base emitter voltage

3066

Test condition B

4.5

V dc

VCE = 3.0 V dc, IC = 10 A dc

(unsaturated)

pulsed (see 4.5.1)

See footnotes at end of table.