MIL-PRF-19500-523 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington Types 2N6383, 2N6384, 2N6385, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon, power Darlington transistors. Three levels of product assurance are provided for each device type as specified in MIL┬ûPRF┬û19500.

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MIL�PRF�19500/523D

NOTES:

Either a clamping circuit or clamping diode may be used.

The coil used shall provide a minimum inductance of 1 mH at 10 A with a max dc resistance of 0.1 ohm.

RS ≤ 0.1 ohm. 12 W, 1 percent tolerance max (noninductive).

With switch S1 closed, set the specified test conditions.

Open S1. Device fails if clamp voltage is not reached and maintained until the current returns to zero.

Perform specified end point tests.

FIGURE 5. Clamped inductive sweep test circuit.

5. PACKAGING

5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order

(see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel

need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are

maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or

within the Military Service's system commands. Packaging data retrieval is available from the managing Military

Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible

packaging activity.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.

The notes specified in MIL�PRF�19500 are applicable to this specification.)

6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design

applications and logistic support of existing equipment.