MIL-PRF-19500-540 Semiconductor Device, Darlington Transistor, Pnp Silicon, Power, Types 2N6298 And 2N6299, Jan, Jantx, And JantxvThis specification covers the performance requirements for PNP, Darlington, silicon, power transistors. Three levels of product assurance is provided for each device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14

MIL-PRF-19500/540F

* TABLE II. Group E inspection (all quality levels) - for qualification and re-qualification only.

Inspection

Sample plan

Method

Conditions

Subgroup 1

45 devices

c=0

Temperature cycling

1051

500 cycles.

Hermetic seal

1071

Fine leak

Gross leak

Electrical measurements

See table I, subgroup 2 herein.

Subgroup 2

45 devices

Test temperature = +125�C; VCB = 80 percent rated;

1048

c=0

Blocking life

T = 1,000 hours.

Electrical measurements

See table I, subgroup 2 herein.

Subgroup 4

Sample size

N/A

Thermal impedance curves

See table E-IX of MIL-PRF-19500, group E, subgroup 4.

Subgroup 8

45 devices

c=0

Reverse stability

1033

Condition B.