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MIL-PRF-19500-540 Semiconductor Device, Darlington Transistor, Pnp Silicon, Power, Types 2N6298 And 2N6299, Jan, Jantx, And JantxvThis specification covers the performance requirements for PNP, Darlington, silicon, power transistors. Three levels of product assurance is provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/540F
* TABLE I. Group A inspection.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1
2071
Visual and mechanical
examination
Subgroup 2
Thermal impedance 2/
See 4.3.2
3131
°C/W
ZθJC
Breakdown voltage,
3011
Bias condition D, IC = -100 mA dc;
V(BR)CEO
collector to emitter
pulsed (see 4.5.1)
2N6298
-60
V dc
2N6299
-80
V dc
Collector to emitter
3041
Bias condition A, VBE = -1.5 V dc
ICEX1
cutoff current
µA dc
2N6298
-10
VCE = -60 V dc
µA dc
2N6299
-10
VCE = -80 V dc
Collector to emitter
3041
Bias condition D
ICEO
cutoff current
2N6298
-0.5
mA dc
VCE = -30 V dc
2N6299
-0.5
mA dc
VCE = -40 V dc
Emitter to base cutoff
3061
-2.0
mA dc
Bias condition D, VEB = -5 V dc
IEBO
current
*
Forward-current
3076
500
VCE = -3 V dc, IC = -1 A dc, pulsed
hFE1
transfer ratio
(see 4.5.1)
*
Forward-current
3076
750
18000
hFE2
VCE = -3 V dc, IC = -4 A dc, pulsed
transfer ratio
(see 4.5.1)
Forward-current
3076
100
*
VCE = -3 V dc, IC = -8 A dc, pulsed
hFE3
transfer ratio
(see 4.5.1)
Base emitter voltage
3066
-2.8
V dc
Test condition B, VCE = -3 V dc,
VBE(on)
(nonsaturated)
IC = -4 A dc, pulsed (see 4.5.1)
Base emitter voltage
3066
-4.0
V dc
Test condition A, IC = -8 A dc,
VBE(sat)1
(saturated)
IB = -80 mA dc, pulsed (see 4.5.1)
Collector - emitter voltage
3071
-2.0
V dc
VCE(sat)1
IC = -4 A dc, IB = -16 mA dc, pulsed
(saturated)
(see 4.5.1)
Collector - emitter voltage
3071
-2.0
V dc
IC = -8 A dc, IB = 80 mA dc, pulsed
VCE(sat)2
(saturated)
(see 4.5.1)
See footnotes at end of table.
6



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