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MIL-PRF-19500-540 Semiconductor Device, Darlington Transistor, Pnp Silicon, Power, Types 2N6298 And 2N6299, Jan, Jantx, And JantxvThis specification covers the performance requirements for PNP, Darlington, silicon, power transistors. Three levels of product assurance is provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/540F

* TABLE I. Group A inspection - Continued.

Inspection 1/

Symbol

Limits

Unit

MIL-STD-750

Min

Max

Method

Conditions

Subgroup 5

TC. = 25�C +10�C, t = 1 s;

3051

Safe operating area (dc)

1 cycle; see figure 4;

VCE = -8 V dc; IC = -8 A dc

Test 1

VCE = -20 V dc; IC = -2.0 A dc

Test 2

Test 3

IC = -100 mA dc

2N6298

VCE = -60 V dc

2N6299

VCE = -80 V dc

Safe operating area

3053

Load condition B,

(switching)

(clamped inductive load);

TA = +25�C; tr + tf ≤1.0 �s

duty cycle ≤ 10 percent,

tp = 1 ms; (vary to obtain IC);

RS = 0.1 ohms; RBB1 = 80 ohms;

VBB1 = -16 V dc;

RBB2 = 100 ohms;

VBB2 = -1.5 V dc; VCC = -50 V dc;

IC = -8 A dc; RL ≤ 2 ohms;

L = 1 mH; clamp voltage

2N6298

-60 V dc

2N6299

-80 V dc

Safe operation area

3053

Load condition C;

(switching)

(unclamped inductive load)

See figure 5, TA = +25�C;

duty cycle ≤ 10 percent

RS = 0.1 ohms

Test 1

tp = 1 ms; (vary to obtain IC);

RBB1 = 80 ohms;

VBB1 ≥ -12 V dc; RBB2 = ∞;

VCC ≥ -30 V dc; IC = -8 A dc;

RL ≤ 0.5 ohms;

L = 1 mH at 8 A dc

See footnotes at end of table.