MIL-PRF-19500-540 Semiconductor Device, Darlington Transistor, Pnp Silicon, Power, Types 2N6298 And 2N6299, Jan, Jantx, And JantxvThis specification covers the performance requirements for PNP, Darlington, silicon, power transistors. Three levels of product assurance is provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/540F

* 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Electrical measurements (end-

points) shall be in accordance with the table I, subgroup 2 herein.

Subgroup

Method

Condition

VCE ≥ -10 V dc; ĆTJ between cycles ≥ +100�C; ton = toff = 3 minutes

1037

for 2,000 cycles. No heat sink or forced-air cooling on the

devices shall be permitted.

* 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with

the table I, subgroup 2 herein.

Subgroup

Method

Condition

2036

Test condition A, weight = 10 pounds, time = 15 seconds.

RθJC = 2.33�C/W.

3151

VCE ≥ -10 V dc; ĆTJ between cycles ≥ +100�C; ton = toff = 3 minutes

1037

for 6,000 cycles. No heat sink or forced-air cooling on device

shall be permitted.

4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-points) shall

be in accordance with table I, subgroup 2 herein.

4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of