For Parts Inquiries call (727) 344-9615
A Service Disabled Veteran Owned Small Business
© Copyright 2015 Integrated Publishing, Inc.

MIL-PRF-19500-542 Semiconductor Device, Transistor, Field Effect, N-Channel, Silicon, Types 2N6756, 2N6758, 2N6760, 2N6762, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14


img
. . . . . .
MIL-PRF-19500/542J
TABLE I. Group A inspection.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
inspection
Subgroup 2
°C/W
Thermal response 2/
3161
See 4.3.4
ZθJC
VGS = 0 V dc, ID = 1 mA dc,
Breakdown voltage,
3407
V dc
V(BR)DSS
condition C
drain to source
2N6756
100
2N6758
200
2N6760
400
2N6762
500
VDS ≥ VGS
Gate to source voltage
3403
VGS(th)1
2.0
4.0
V dc
(threshold)
ID = 0.25 mA dc
± 100
Gate current
3411
VGS = +20 V dc, VDS = 0,
IGSSF1
nA dc
bias condition C
± 100
Gate current
3411
VGS = -20 V dc, VDS = 0,
IGSSR1
nA dc
bias condition C
µA dc
Drain current
3413
VGS = 0 V dc
IDSS1
25
VDS = 80 percent of rated
VDS; bias condition C
Static drain to source
3421
VGS = 10 V dc, pulsed
rDS(on)1
ohms
on-state resistance
(see 4.5.1); condition A,
ID = rated ID2 (see 1.3)
2N6756
0.18
2N6758
0.4
2N6760
1.0
2N6762
1.5
Static drain to source
3421
VGS = 10 V dc, pulsed
rDS(on)2
ohms
on-state resistance
(see 4.5.1); condition A,
ID = rated ID1 (see 1.3)
2N6756
.21
2N6758
.49
2N6760
1.22
2N6762
1.80
See footnotes at end of table.
12



For Parts Inquires call Parts Hangar, Inc (727) 493-0744
© Copyright 2015 Integrated Publishing, Inc.
A Service Disabled Veteran Owned Small Business

© Copyright 2015 Integrated Publishing, Inc. Site Design & Marketing by Strategico.