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MIL-PRF-19500-542 Semiconductor Device, Transistor, Field Effect, N-Channel, Silicon, Types 2N6756, 2N6758, 2N6760, 2N6762, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/542J
TABLE I. Group A inspection - Continued.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 4
ID = rated ID1; VGS = 10 V dc
Switching time test
3472
Gate drive impedance = 7.5Ω
VDD = 50 percent of VBR(DSS)
Turn-on delay time
td(on)
ns
2N6756, 2N6758
35
2N6760, 2N6762
30
Rise time
tr
ns
2N6756, 2N6758
80
2N6760, 2N6762
40
Turn-off delay time
td(off)
ns
2N6756, 2N6758
60
2N6760, 2N6762
80
Fall time
tf
ns
2N6756
45
2N6758
40
2N6760
35
2N6762
30
Subgroup 5
See figure 6; VDS = 80 percent of
Safe operating area test
3474
rated VBR(DSS),
VDS = 200 V max; tp = 10 ms
See table I, subgroup 2
Electrical measurements
Single pulse unclamped
3470
See 4.3.3, c = 0, 116 devices
inductive switching
Electrical measurements
See table I, subgroup 2
Subgroup 6
Not applicable
See footnotes at end of table.
14



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