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MIL-PRF-19500-542 Semiconductor Device, Transistor, Field Effect, N-Channel, Silicon, Types 2N6756, 2N6758, 2N6760, 2N6762, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/542J
TABLE I. Group A inspection - Continued.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 2 - Continued
Forward voltage (source
4011
Pulsed (see 4.5.1)
VSD
V
VGS = 0 V, ID = ID1
drain diode)
2N6756
1.8
2N6758
1.6
2N6760
1.5
2N6762
1.4
Subgroup 3
TC = TJ = +125°C
High temperature
operation:
± 200
Gate current
3411
Bias condition C
IGSS2
nA dc
VGS = ± 20 V dc
VDS = 0 V dc
Drain current
3413
Bias condition C
VGS = 0 V dc
VDS = 100 percent of rated
IDSS2
1.0
mA dc
VDS
IDSS3
0.25
mA dc
VDS = 80 percent of rated
VDS
Static drain to source
3421
VGS = 10 V dc pulsed
rDS(on)3
ohms
on-state resistance
(see 4.5.1); ID = rated ID2
2N6756
0.34
2N6758
0.8
2N6760
2.2
2N6762
3.3
VDS ≥ VGS
Gate to source
3403
VGS(th)2
1.0
V dc
voltage (threshold)
ID = 0.25 mA dc
TC = TJ = -55°C
Low temperature
operation:
VDS ≥ VGS
Gate to source voltage
3403
VGS(th)3
5.0
V dc
threshold
ID = 0.25 mA dc
See footnotes at end of table.
13



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