For Parts Inquiries call (727) 344-9615
A Service Disabled Veteran Owned Small Business
© Copyright 2015 Integrated Publishing, Inc.

MIL-PRF-19500-542 Semiconductor Device, Transistor, Field Effect, N-Channel, Silicon, Types 2N6756, 2N6758, 2N6760, 2N6762, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14


img
. . . . . . . . . . . . . . . . . . . . . .
MIL-PRF-19500/542J
*  4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of
MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen
Measurement
(see table E-IV of
JANS level
JANTX and JANTXV levels
(1) (2)
(3)
Gate stress test (see 4.3.2)
Gate stress test (see 4.3.2)
(3)
Method 3470 of MIL-STD-750, (see 4.3.3)
Method 3470 of MIL-STD-750, (see 4.3.3)
optional
optional
Method 3161 of MIL-STD-750, (see 4.3.4)
Method 3161 of MIL-STD-750, (see 4.3.4)
(3) 3c
9
IGSSF1, IGSSR1, IDSS1
Not applicable
Method 1042 of MIL-STD-750, test condition B
Method 1042 of MIL-STD-750, test condition B
10
11
IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1,
IGSSF1, IGSSR1, IDSS1, rDS(on)1,
subgroup 2 of table I herein:
VGS(th)1, subgroup 2 of table I herein.
ĆIGSSF1 = ±20 nA dc or ±100 percent of initial
value, whichever is greater.
ĆIGSSR1 = ±20 nA dc or ±100 percent of initial
value, whichever is greater.
ĆIDSS1 = ±25 µA dc or ±100 percent of initial value,
whichever is greater.
12
Method 1042 of MIL-STD-750, test condition A,
Method 1042 of MIL-STD-750, test condition A; or
t = 48 hours minimum at +175°C min
t = 240 hours
13
Subgroups 2 and 3 of table I herein;
Subgroup 2 of table I herein;
ĆIGSSF1 = ±20 nA dc or ±100 percent of initial
ĆIGSSF1 = ±20 nA dc or ±100 percent of initial
value, whichever is greater.
value, whichever is greater.
ĆIGSSR1 = ±20 nA dc or ±100 percent of initial
ĆIGSSR1 = ±20 nA dc or ±100 percent of initial
value, whichever is greater.
value, whichever is greater.
ĆIDSS1 = ±25 µA dc or ±100 percent of initial value,
ĆIDSS1 = ±25 µA dc or ±100 percent of initial value,
whichever is greater.
whichever is greater.
ĆrDS(on)1 = ±20 percent of initial value.
ĆrDS(on)1 = ±20 percent of initial value.
ĆVGS(th)1 = ±20 percent of initial value.
ĆVGS(th)1 = ±20 percent of initial value.
(1) At the end of the test program, IGSSF1, IGSSR1 and IDSS1 are measured.
(2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1 and VGS(th)1 shall be invoked.
* (3) Shall be performed anytime after temperature cycling, screen 3a; JANTX and TXV levels do not need to
be repeated in screening requirements.
8



For Parts Inquires call Parts Hangar, Inc (727) 493-0744
© Copyright 2015 Integrated Publishing, Inc.
A Service Disabled Veteran Owned Small Business

© Copyright 2015 Integrated Publishing, Inc. Site Design & Marketing by Strategico.