MIL-PRF-19500/542J
TABLE II. Group E inspection (all quality levels) for qualification or re-qualification only.
Qualification and
Inspection 1/
large lot quality
conformance
Method
Conditions
inspection 1/
Subgroup 1
45 devices
c=0
Condition G, 500 cycles
1051
Temperature cycle
Hermetic seal
1071
Fine leak
Gross leak
Electrical measurements
See table I, subgroup 2
Subgroup 2 2/
45 devices
c=0
Steady-state reverse bias
1042
Condition A, 1,000 hours
See table I, subgroup 2
Electrical measurements
Steady-state gate bias
1042
Condition B, 1,000 hours
Electrical measurements
See table I, subgroup 2
Subgroup 4
sample size
N/A
Thermal impedance curves
See MIL-PRF-19500
Subgroup 5
3 devices
c=0
Barometric pressure
1001
Test condition C
(reduced) 400 and 500 V only
VISO = VDS, I(ISO) = .25 mA (max)
Subgroup 10
Commutating diode for safe operating
3476
Test conditions shall be derived by the
22 devices
area test procedure for measuring dv/dt
manufacturer
c=0
during reverse recovery of power
MOSFET transistors or insulated gate
bipolar transistors
1/ JANHC and JANKC devices are qualified in accordance with appendix G of MIL-PRF-19500.
2/ A separate sample for each test may be pulled.
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