MIL-PRF-19500-545 Semiconductor Device, Transistor, Pnp, Silicon, Power, Types 2N5151, 2N5153, 2N5151L, 2N5153L, 2N5151U3, And 2N5153U3, Jan, Jantx, Jantxv, Jantxvf, Jantxvr, Jans, Janhc, And Jankc, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Janhcc, Janhcd, Jankcb, Jankcc, Jankcd, Jankccm, Jankccd, Jankccp, Jankccl, Jankccr, Jankccf, Jankccg, And JankcchThis specification covers the performance requirements for PNP, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/545K

TABLE IV. Group E inspection (all quality levels) � for qualification or re-qualification only.

Inspection

Qualification

Method

Conditions

Subgroup 1

45 devices

c=0

1051

Test condition C, 500 cycles

Temperature cycling

(air to air)

Hermetic seal

Fine leak

Gross leak

1071

See table I, subgroup 2 and table III herein

Electrical measurements

Subgroup 2

45 devices

c=0

1037

Intermittent life

VCB = -10 V dc, 6,000 cycles. Adjust device current, or

power, to achieve a minimum ĆTJ of +100�C

Electrical measurements

See table I, subgroup 2 and table III herein

Subgroup 4

Thermal impedance curves

See table E-IX of MIL-PRF-19500, group E, subgroup 4.

Subgroup 5

Not applicable

Subgroup 8

45 devices

c=0

Reverse stability

1033

Condition B