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MIL-PRF-19500-555 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6788, 2N6788U, 2N6790, 2N6790U, 2N6792, 2N6792U, 2N6794, And 2N6794U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/555L
4.3.1 Screening (JANHC and JANKC). Screening of die shall be in accordance with MIL-PRF-19500, as a
minimum, die shall be 100 percent probed in accordance with table I, subgroup 2, except test current shall not
exceed 20 A.
4.3.2 Gate stress test. Apply VGS = +30 V minimum for t = 250 µs minimum.
* 4.3.3 Single pulsed unclamped inductive switching.
a.
Peak current, ID......................................................................... 2.2 A.
b.
Peak gate voltage, VGS ............................................................ 10 V.
Gate to source resistor, RGS..................................................... 25 ≤ Rg ≤ 200Ω.
c.
Initial case temperature ............................................................. +25°C, +10°C, -5°C.
d.
Inductance, L ............................................................................. 100 µH (minimum)
*
e.
f.
Number of pulses to be applied ................................................. 1 pulse.
4.3.4 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method
3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VH where appropriate).
Measurement delay time (tMD) = 70 µs max. See table II, group E, subgroup 4 herein.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. Alternate flow
is allowed for conformance inspection in accordance with MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein. Electrical measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as
follows. Electrical measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2
herein.
4.4.2.1 Group B inspection table E-VIA (JANS) of MIL-PRF-19500.
*
Subgroup
Method
Conditions
B3
1051
Test condition G.
B3
2037
Test condition D. All internal wires for each device shall be pulled separately.
*
B4
1042
Test condition D. The heating cycle shall be 1 minute minimum. No heat sink or
*
forced air cooling on the device shall be permitted during the "on" cycle.
B5
1042
A separate sample may be pulled for each test. Accelerated steady-state reverse
bias; test condition A, VDS = rated, TA = +175°C, t = 120 hours, read and record
VBR(DSS) (pre and post) at ID = -1 mA. Read and record IDSS (pre and post).
Accelerated steady-state gate stress; test condition B, VGS = rated, TA = +175°C,
B5
1042
t = 24 hours.
14



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