MIL-PRF-19500-555 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6788, 2N6788U, 2N6790, 2N6790U, 2N6792, 2N6792U, 2N6794, And 2N6794U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/555L

D version

Dimensions 2N6792, 2N6794

Ltr

Inches

Millimeters

Min

Max

Min

Max

.093

.102

2.36

2.59

.140

.144

3.56

3.66

.025

.029

0.64

0.74

.026

.030

0.66

0.76

.016

.020

0.41

0.51

.017

.021

0.43

0.53

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Die thickness = .015 �.005 inch (0.38 �0.13 mm).

4. Back metal: Ag - Ti - Ni.

5. Top metal: Al.

6. Back contact: Drain.

8. See 6.5.

FIGURE 5. Physical dimensions JANHCD and JANKCD.