MIL-PRF-19500-555 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6788, 2N6788U, 2N6790, 2N6790U, 2N6792, 2N6792U, 2N6794, And 2N6794U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/555L

Dimensions - 2N6788

Ltr

Inches

Millimeters

Min

Max

Min

Max

.093

.097

2.36

2.46

.123

.127

3.12

3.22

.021

.025

.53

.63

.013

.017

.33

.43

.014

.018

.36

.46

.023

.027

.58

.69

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Unless otherwise specified, tolerance is �.005 inch (0.13 mm).

4. The physical characteristics of the die are: The back metals are chromium, nickel, and silver and

the back contact is the drain. The top metal is aluminum.

5. Die thickness is .015 inch (0.38 mm) �.001 inch (0.025 mm).

FIGURE 6. JANHCE and JANKCE (E-version) die dimensions for 2N6788.