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MIL-PRF-19500-555 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6788, 2N6788U, 2N6790, 2N6790U, 2N6792, 2N6792U, 2N6794, And 2N6794U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14


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MIL-PRF-19500/555L
A version
Dimensions - 2N6788
Dimensions - 2N6790
Dimensions - 2N6792, 2N6794
Ltr
Inches
Millimeters
Inches
Millimeters
Inches
Millimeters
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
A
.107
.121
2.72
3.07
.094
.112
2.39
2.85
.131
.147
3.33
3.73
B
.078
.088
1.98
2.24
.083
.099
2.11
2.52
.090
.106
2.29
2.69
C
.020
.030
0.51
0.76
.018
.028
0.46
0.71
.022
.032
0.56
0.81
D
.027
.037
0.69
0.94
.028
.038
0.71
0.97
.028
.038
0.71
0.97
E
.013
.023
0.33
0.58
.015
.025
0.38
0.64
.015
.025
0.38
0.64
F
.019
.029
0.48
0.74
.018
.028
0.46
0.71
.020
.030
0.51
0.76
NOTES:
1.  Dimensions are in inches.
2.  Millimeters are given for general information only.
3.  Die thickness = .019 ± .005 inch (0.48 ± 0.13 mm).
4.  Back metal: Cr - Ni - Ag.
5.  Top metal: Al.
6.  Back contact: Drain.
7.  Layout of gate fingers shown is typical, specific layout register in accordance with DSCC Form 36D.
8.  See 6.5.
FIGURE 3. Physical dimensions JANHCA and JANKCA.
6



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