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MIL-PRF-19500-558 Semiconductor Device, Unitized, Pnp, Silicon, Switching, Four Transistor Array, Types 2N6987, 2N6987U, And 2N6988, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, And JanshThis specification covers the performance requirements for PNP, silicon, switching transistors, four independent chip array. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Radiation hardness assurance \(RHA\) level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/558J

* TABLE I. Group A inspection.

Inspection 1/

MIL-STD-750

Symbol

Limit

Unit

Method

Conditions

Min

Max

Subgroup 1 2/

Visual and mechanical

2071

examination

Solderability 3/ 4/

2026

n = 15 leads, c = 0

Resistance to solvents

1022

n = 15 devices, c = 0

3/ 4/ 5/

Temp cycling 3/ 4/

1051

Test condition C, 25 cycles. n = 22

devices, c = 0

Hermetic seal 4/

1071

n = 22 devices, c = 0

Fine leak

Gross leak

Electrical

Table I, subgroup 2

measurements 4/

Precondition TA = +250�C at

Bond strength 3/ 4/

2037

t = 24 hours or TA = +300�C at

t = 2 hours. n = 11 wires, c = 0

Decap internal visual

2075

n = 1 device, c = 0

(design verification) 4/

Subgroup 2

�C/W

Thermal impedance

3131

See 4.3.2

ZθJX

�A dc

Collector to base,

3036

ICBO1

VCB = 60 V dc

cutoff current

�A dc

Emitter to base,

3061

IEBO1

VBE = 5 V dc

cutoff current

Breakdown voltage

3011

V dc

Bias condition D; IC = 10 mA dc;

V(BR)CEO

collector to emitter

pulsed (see 4.5.1)

Collector to base cutoff

3036

nA dc

Bias condition D; VCB = 50 V dc

ICBO2

current

Emitter to base cutoff

3061

nA dc

Bias condition D; VEB = 4 V dc

IEBO2

current

See footnotes at end of table.