MIL-PRF-19500/580C
* TABLE I. Group A inspection - Continued.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 2 - Continued
Collector base cutoff current
3036
Bias condition D
ICBO
2N4234
-100
nA dc
VCB = -40 V dc
2N4235
-100
nA dc
VCB = -60 V dc
2N4236
-100
nA dc
VCB = -80 V dc
Emitter to base cutoff current
3061
Bias condition D, VBE = -7 V dc
-0.5
mA dc
IEBO
Forward current transfer ratio
3076
40
IC = -100 mA dc VCE = -1.0 V dc;
hFE1
pulsed (see 4.5.1).
Forward current transfer ratio
3076
IC = -250 mA dc VCE = -1.0 V dc;
30
150
hFE2
pulsed (see 4.5.1).
Forward current transfer ratio
3076
IC = -500 mA dc VCE = -1.0 V dc;
20
hFE3
pulsed (see 4.5.1).
Collector to emitter voltage
3071
VCE(sat)1
-0.6
V dc
IC = -1.0 A dc, IB = -100 mA dc;
(saturated
pulsed (see 4.5.1).
Collector to emitter voltage
3071
IC = -500 mA dc, IB = -50 mA dc;
VCE(sat)2
-0.4
V dc
(saturated
pulsed (see 4.5.1).
Base emitter voltage
3066
Test condition A, pulsed (see
VBE(sat)1
-1.1
V dc
4.5.1), IC = -500 mA dc , IB = -50
mA dc
Base emitter voltage
3066
VBE(sat)2
-1.5
V dc
Test condition A, IC = -1.0 A dc,
IB = -100 mA dc, pulsed (see
4.5.1).
Subgroup 3
TA = +150°C
High-temperature
operation:
Collector to emitter cutoff
3041
ICEX2
Bias condition A, VBE = -1.5 V dc
current
2N4234
-1.0
mA dc
VCE = -30 V dc
2N4235
-1.0
mA dc
VCE = -40 V dc
2N4236
-1.0
mA dc
VCE = -60 V dc
See footnotes at end of table.
10
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