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MIL-PRF-19500-580 Semiconductor Device, Transistor, Pnp, Silicon Amplifier, Types 2N4234, 2N4235, And 2N4236, Jan, Jantx, And JantxvThis specification covers the performance requirements for PNP, silicon, amplifier transistor. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/580C
* TABLE I. Group A inspection.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1 2/
*
Visual and mechanical
2071
examination 3/
Solderability 3/
2026
Resistance to solvents
1022
3/ 4/
Temp cycling 3/
1051
Test condition C, 25 cycles.
Hermetic seal
1071
Fine leak
Gross leak
Electrical
Table I, subgroup 2
measurements
Precondition TA = +250°C at
Bond strength 3/
2037
t = 24 hrs or
TA = +300°C at t = 2 hrs
Decap internal visual design
2075
verification
Subgroup 2
°C/W
Thermal impedance
3131
See 4.3.2
ZθJX
Breakdown voltage collector to
3011
Bias condition D; I C = -100 mA dc;
V(BR)CEO
emitter
pulsed (see 4.5.1)
2N4234
-40
V dc
2N4235
-60
V dc
2N4236
-80
V dc
Collector emitter cutoff current
3041
Bias condition D
ICEO
2N4234
-1.0
mA dc
VCB = -30 V dc
2N4235
-1.0
mA dc
VCB = -40 V dc
2N4236
-1.0
mA dc
VCB = -60 V dc
Collector emitter cutoff current
3041
Bias condition A, VBE = -1.5 V dc
ICEX1
2N4234
-100
nA dc
VCB = -40 V dc
2N4235
-100
nA dc
VCB = -60 V dc
2N4236
-100
nA dc
VCB = -80 V dc
See footnotes at end of table.
9



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