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MIL-PRF-19500-592 Semiconductor Device, Repetitive Avalanche, Field Effect Transistor, N-Channel, Silicon Types 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, And 2N7228U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\).

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MIL-PRF-19500/592G
4.3 Screening (JANTX, JANTXV, and JANS levels only). Screening shall be in accordance with table E-IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table E-IV,
Measurement
of MIL-PRF-19500)
(1) (2)
JANS level
JANTX and JANTXV levels
(3)
Gate stress (see 4.3.2)
Gate stress (see 4.3.2)
(3)
Method 3470 of MIL-STD-750 (see 4.3.3)
Method 3470 of MIL-STD-750 (see 4.3.3)
(3) 3c
Method 3161 of MIL-STD-750 (see 4.3.4)
Method 3161 of MIL-STD-750 (see 4.3.4)
IGSSF1, IGSSR1, IDSS1,
9
Subgroup 2 of table I herein.
subgroup 2 of table herein
10
Method 1042 of MIL-STD-750, test
Method 1042 of MIL-STD-750, test
condition B
condition B
11
Subgroup 2 of table I herein
Subgroup 2 of table I herein.
IGSSF1, IGSSR1, IDSS1, rDS(on)1,
IGSSF1, IGSSR1, IDSS1, rDS(on)1,
VGS(th)1;
VGS(th)1
ĆIGSSF1 = ±20 nA dc or ±100 percent
of initial value, whichever is greater.
ĆIGSSR1 = ±20 nA dc or ±100 percent
of initial value, whichever is greater.
ĆIDSS1 = ±25 µA dc or ±100 percent
of initial value, whichever is greater.
12
Method 1042 of MIL-STD-750, condition A Method 1042 of MIL-STD-750, condition A
13
Subgroups 2 and 3 of table I herein;
Subgroup 2 of table I herein;
ĆIGSSF1 = ±20 nA dc or ±100 percent
ĆIGSSF1 = ±20 nA dc or ±100 percent
of initial value, whichever is greater.
of initial value, whichever is greater.
ĆIGSSR1 = ±20 nA dc or ±100 percent
ĆIGSSR1 = ±20 nA dc or ±100 percent
of initial value, whichever is greater.
of initial value, whichever is greater.
ĆIDSS1 = ±25 µA dc or ±100 percent
ĆIDSS1 = ±25 µA dc or ±100 percent
of initial value, whichever is greater.
of initial value, whichever is greater.
ĆrDS(on)1 = ±20 percent of initial value,
ĆrDS(on)1 = ±20 percent of initial value,
ĆVGS(th)1 = ±20 percent of initial value.
ĆVGS(th)1 = ±20 percent of initial value.
*
Method 1081 of MIL-STD-750 (see 4.3.5)
Method 1081 of MIL-STD-750 (see 4.3.5)
17
Endpoints: Subgroup 2 of table I herein
Endpoints: Subgroup 2 of table I herein
(1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1 are measured.
(2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1 shall be invoked.
(3) Shall be performed anytime before screen 9.
12



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