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MIL-PRF-19500-592 Semiconductor Device, Repetitive Avalanche, Field Effect Transistor, N-Channel, Silicon Types 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, And 2N7228U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\).

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MIL-PRF-19500/592G
4.3.1. Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". As a minimum, die shall be 100 percent
probed in accordance with table I, subgroup 2, except test current shall not exceed 20 A. Burn-in duration for the
JANKC level follows JANS requirements; the JANHC follows JANTX requirements.
4.3.2 Gate stress test. Apply VGS = 30 V minimum for t = 250 µs minimum.
4.3.3 Single pulsed unclamped inductive switching.
a.
Peak current, ID..............................IAR(max).
b.
Peak gate voltage, VGS .................10 V.
Gate to source resistor, RGS..........25 ≤ Rg ≤200 Ω.
c.
Initial case temperature ..................+25°C, +10°C, -5°C.
d.
(VBR -VDD )  
2E  
mH minimum.
AS
(I  D1 )
e.
Inductance, L ..................................
2
VBR
f.
Number of pulses to be applied ......1 pulse minimum.
g.
Supply voltage (VDD) .....................50 V, (25 V for devices with minimum V(BR)DSS of 100 V).
4.3.4 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method
3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VH where appropriate).
Measurement delay time (tMD) = 70 µs max. See table II, group E, subgroup 4 herein.
*
4.3.5 Dielectric withstanding voltage.
a.
Magnitude of test voltage.......................................900V DC
b.
Duration of application of test voltage.......................15 seconds (min)
c.
Points of application of test voltage...........................All leads to case (bunch connection)
d.
Method of connection.............................................Mechanical
e.
Kilovolt-ampere rating of high voltage source..............1200V/1.0 mA (min)
f.
Maximum leakage current........................................1.0 mA
g.
Voltage ramp up time..............................................500V/second
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. Alternate flow
is allowed for conformance inspection in accordance with MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I
herein. (End-point electrical measurements shall be in accordance with table I, subgroup 2 herein.)
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as
follows. Electrical measurements (end-points) and delta requirements shall be in accordance with table I, subgroup 2
herein.
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