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MIL-PRF-19500-592 Semiconductor Device, Repetitive Avalanche, Field Effect Transistor, N-Channel, Silicon Types 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, And 2N7228U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\).

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MIL-PRF-19500/592G
4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500.
*
Subgroup
Method
Conditions
B3
1051
Test condition G.
B3
2075
See 3.4.2 herein.
B3
2037
Test condition A. All internal wires for each device shall be pulled separately. If group
B3 is to be continued to C6, strength test may be performed after C6.
*
B4
1042
Test condition D, 2,000 cycles (6,000 cycles for devices with .008 inch or larger bond
wires). The heating cycle shall be 1 minute minimum. No heat sink or forced air
cooling on the device shall be permitted during the on-cycle.
B5
1042
A separate sample may be pulled for each test. Accelerated steady-state reverse bias;
test condition A, VDS = rated, TA = +175°C, t = 120 hours, read and record VBR(DSS)
(pre and post) at ID = 1 mA. Read and record IDSS (pre and post) in accordance with
table I, subgroup 2 herein. VBR(DSS) delta cannot exceed 10 percent.
Accelerated steady-state gate stress; test condition B, VGS = rated, TA = +175°C,
B5
1042
t = 24 hours.
4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup
Method
Conditions
B2
1051
Test condition G.
B3
1042
Test condition D, 2,000 cycles. The heating cycle shall be 1 minute minimum. No
heat sink or forced air cooling on the device shall be permitted during the on-cycle.
B3
2037
Test condition A. All internal wires for each device shall be pulled separately. If group
B3 is to be continued to C6, bond strength test may be performed after C6.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) and delta
requirements shall be in accordance with table I, subgroup 2 herein.
Subgroup
Method
Conditions
C2
2036
Test condition A; weight = 10 pounds, t = 15 s (not applicable for surface mount
devices).
C5
3161
See 4.3.4.
C6
1042
Test condition D, 6,000 cycles. The heating cycle shall be 1 minute minimum. No
heat sink or forced air cooling on the device shall be permitted during the on-cycle.
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical
measurements (end-points) shall be in accordance with table I, subgroup 2 herein.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
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