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MIL-PRF-19500-592 Semiconductor Device, Repetitive Avalanche, Field Effect Transistor, N-Channel, Silicon Types 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, And 2N7228U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\).

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MIL-PRF-19500/592G
1.3 Maximum ratings - Continued.
Type
IAR
EAS
EAR
rDS(on) max (1) (6)
VGS = 10 V dc
ID = ID2
TJ = +25°C
TJ = +150°C
Ω
Ω
A
mj
mj
2N7224, 2N7224U
34.0
150
15.0
0.070
0.133
2N7225, 2N7225U
27.4
500
15.0
0.100
0.200
2N7227, 2N7227U
14.0
700
15.0
0.315
0.693
2N7228, 2N7228U
12.0
750
15.0
0.415
0.913
Derate linearly 1.2 W/°C for TC > +25°C.
(1)
(2)
The following formula derives the maximum theoretical ID limit. ID is limited by package and internal wires
and may be limited by pin diameter:
TJM - TC
ID = (
RθJC )  x ( R  DS ( on ) at TJM )
(3)
See figure 6, maximum drain current graph.
IDM = 4 X ID1 as calculated in note (2).
(4)
(5)
See figure 7, thermal impedance curves.
(6)
Pulsed (see 4.5.1).
1.4 Primary electrical characteristics. TC = +25°C (unless otherwise specified).
Max IDSS1
Max rDS(on) (1)
Type
Min V(BR)DSS
VGS(th)1
VGS = 10 V dc
VGS = 0
ID = ID2
VDS ≥ VGS
VGS = 0
VDS
TJ = +25°C
= 80 percent
ID = 1.0 mA dc
of rated VDS
ID = 0.25 mA
µA dc
V dc
V dc
Ohms
Min
Max
2N7224, 2N7224U
100
0.070
2.0
4.0
25
2N7225, 2N7225U
200
0.100
2.0
4.0
25
2N7227, 2N7227U
400
0.315
2.0
4.0
25
2N7228, 2N7228U
500
2.0
4.0
0.415
25
(1) Pulsed (see 4.5.1).
2



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