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MIL-PRF-19500-592 Semiconductor Device, Repetitive Avalanche, Field Effect Transistor, N-Channel, Silicon Types 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, And 2N7228U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\).

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MIL-PRF-19500/592G
Dimension
Ltr.
Inches
Millimeters
Notes
Min
Max
Min
Max
BL
.535
.545
13.59
13.84
CH
.249
.260
6.32
6.60
LD
.035
.045
0.89
1.14
LL
.510
.570
12.95
14.48
LO
.150 BSC
3.81 BSC
LS
.150 BSC
3.81 BSC
MHD
.139
.149
3.53
3.78
MHO
.665
.685
16.89
17.40
TL
.790
.800
20.07
20.32
3, 4
TT
.040
.050
1.02
1.27
TW
.535
.545
13.59
13.84
3, 4
Term 1
Drain
Term 2
Source
Term 3
Gate
NOTES:
1.  Dimensions are in inches.
2.  Millimeters are given for general information only.
3.  Glass meniscus included in dimension D and E.
4.  All terminals are isolated from the case.
5.  In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1. Physical dimensions for TO-254AA - Continued.
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