MIL-PRF-19500-592 Semiconductor Device, Repetitive Avalanche, Field Effect Transistor, N-Channel, Silicon Types 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, And 2N7228U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\).

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MIL-PRF-19500/592G

2N7224 and 2N7225

Dimensions - 2N7224 and 2N7225

Ltr

Inches

Millimeters

Min

Max

Min

Max

.254

.260

6.45

6.60

.254

.260

6.45

6.60

.028

.033

.71

.84

.017

.022

.43

.56

.047

.053

1.19

1.35

.059

.065

1.50

1.65

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Unless otherwise specified, tolerance is �.005 inch (0.13 mm).

4. The physical characteristics of the die are: The back metals are chromium, nickel, and silver and

the back contact is the drain. The top metal is aluminum.

5. Die thickness is .015 inch (0.38 mm) �.001 inch (0.025 mm).

FIGURE 4. JANHC and JANKC (B-version) die dimensions for 2N7224 and 2N7225.