MIL-PRF-19500-627 Semiconductor Device, Diode, Silicon, Ultra-Fast Recovery, Power Rectifier, 1N6688, 1N6689, 1N6688Us, 1N6689Us Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, ultra-fast recovery, semiconductor power rectifier diode. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/627C

TABLE III. Groups B, C, and E delta measurements. 1/ 2/ 3/ 4/

Step

Inspection

Symbol

Limits

Unit

Method

Conditions

Min

Max

ĆVF1

�100 mV change from

Forward voltage change

4011

IF = 5 A, pulsed

previous measured value

ĆIR1

�5

�A

Reverse current change

4016

VR = rated VRWM

(see 1.3, col. 2)

1/ Devices which exceed table I, subgroup 2 (group A) limits for this test shall not be accepted.

2/ The delta measurements for group B inspection, table E-VIA (JANS) of MIL-PRF-19500 are as follows:

Subgroup 5, see table III herein, steps 1 and 2.

3/ The delta measurements for group E inspection, table E-IX of MIL-PRF-19500 are as follows: Subgroup 1, see

table III herein, steps 1 and 2.

4/ Also applies to US suffix versions.