The documentation and process conversion
INCH-POUND
measures necessary to comply with this revision
MIL-PRF-19500/628C
shall be completed by 29 October 2014.
29 July 2014
SUPERSEDING
MIL-PRF-19500/628B
24 August 2012
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, POWER RECTIFIER,
1N6690 THROUGH 1N6693, 1N6690US THROUGH 1N6693US
JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a silicon, ultra-fast recovery,
semiconductor power rectifier diode. Three levels of product assurance are provided for each device type as
specified in MIL-PRF-19500.
1.2 Physical dimensions. See figures 1 (similar to DO-41) and 2 (surface mount).
1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
1.3.1 Ratings applicable to all types. Ratings applicable to all Part or Identifying Numbers (PIN).
TSTG and TJ = -65°C to +175°C.
1.3.2 Ratings applicable to individual types.
Col. 1
Col. 2
Col. 3
Col. 4
Col. 5
Col. 6
Col. 7
Device type
IFSM
RθJL
RθJEC
VRWM
IO
trr
at
(2)
at
L = .375 inch
(1)
tp = 8.3 ms
(9.52 mm)
°C/W
°C/W
V dc
A
A pk
ns
1N6690, US
600
20
375
40
4
3.5
1N6691, US
800
20
375
40
4
3.5
1N6692, US
1,000
20
375
40
4
3.5
1N6693, US
1,200
20
375
40
4
3.5
Derate linearly at 267 mA/°C from +100°C to +175°C.
(1)
(2)
US devices only.
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN:
VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact information
can change, you may want to verify the currency of this address information using the ASSIST Online database at
AMSC N/A
FSC 5961
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