MIL-PRF-19500-628 Semiconductor Device, Diode, Silicon, Ultra-Fast Recovery, Power Rectifier, 1N6690 Through 1N6693, 1N6690Us Through 1N6693Us Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, ultra-fast recovery, semiconductor power rectifier diode. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/628C

4.5.3.1 Free air burn-in. The use of a current limiting or ballast resistor is permitted provided that each DUT still

sees the full Pt (minimum) and that the minimum applied voltage, where applicable, is maintained through-out the

burn-in period. TJ = +115�C minimum and +150�C maximum for screening, and TJ = +125�C minimum for 4.4.2.2

and 4.4.3.1 life tests. Accelerated life test in 4.4.2.1 shall be TJ = +150�C minimum.

4.5.4 Scope display evaluation. Scope display evaluation shall be stable in accordance with method 4023 of

MIL-STD-750. Scope display may be performed on ATE (automatic test equipment) for screening only with the

approval of the qualifying activity. Scope display in table I, subgroup 4 shall be performed on a scope. Reverse

current (IBR) over the knee shall be 500 �A peak.

4.5.5 Thermal resistance. Thermal resistance measurement shall be performed in accordance with method 4081

of MIL-STD-750 using the guidelines in that method for determining IM, IH, and tH. Measurement delay time tMD = 100

�s max. See table E-IX of MIL-PRF-19500.