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MIL-PRF-19500-628 Semiconductor Device, Diode, Silicon, Ultra-Fast Recovery, Power Rectifier, 1N6690 Through 1N6693, 1N6690Us Through 1N6693Us Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, ultra-fast recovery, semiconductor power rectifier diode. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/628C
* 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500. See table III for delta limits when applicable.
4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500.
Subgroup
Method
Condition
-0°C to +100°C, 10 cycles.
C2
1056
-55°C to +175°C, 25 cycles.
C2
1051
Axial devices - Tension: Test condition A; weight = 12 pounds; t = 30 seconds.
C2
2036
Lead fatigue: Test condition E; weight 2 pounds, t = 15 s.
NOTE: Lead fatigue is not applicable for US devices.
*
C2
2038
US devices - Condition B, 12 pounds, t = 30s.
See 4.5.5, +25°C ≤ TA ≤ +35°C (recorded before test is performed); RθJL
C5
4081
(maximum) ≤ 4°C/W; L = .375 inch (9.53 mm). For surface mount devices
(US version), RθJEC ≤ 3.5°C/W.
IO = IO (rated see col. 3 of 1.3) minimum; adjust IO to achieve TJ of +125°C
C6
1027
minimum; apply VR = rated VRWM (see col. 2 of 1.3), f = 50 - 60 Hz (see 4.5.3.1).
Delta shall not exceed 25 percent of initial reading.
* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and as specified herein. See table III for delta limits
when applicable.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Inspection conditions. Unless otherwise specified, all inspections shall be conducted at TA = room ambient
as defined in the general requirements of MIL-STD-750 (see 4.5).
4.5.3 Burn-in and life tests. These tests shall be conducted with a half-sine waveform of the specified peak voltage
impressed across the diode in the reverse direction followed by a half-sine waveform of the specified average
rectified current. The forward conduction angle of the rectified current shall be neither greater than 180 degrees, nor
less than 150 degrees.
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