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MIL-PRF-19500-628 Semiconductor Device, Diode, Silicon, Ultra-Fast Recovery, Power Rectifier, 1N6690 Through 1N6693, 1N6690Us Through 1N6693Us Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, ultra-fast recovery, semiconductor power rectifier diode. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/628C
TABLE II. Group E inspection (all quality levels) for qualification and requalification only.
Inspection
Sampling
plan
Method
Conditions
Subgroup 1
45 devices
c=0
Thermal shock
1056
20 cycles, condition D except low temperature shall be
achieved using liquid nitrogen (-195°C). Visual for cracked
(glass strain)
glass.
500 cycles, -65°C to +175°C.
Temperature cycling
1051
Hermetic seal
1071
gross leak
Electrical measurement
See table I, subgroup 2 and table III herein, steps 1 and 2.
Subgroup 2
22 devices
c=0
TA = +150°C; t = 1,000 hours +65, -0 hours; dc = 80 - 85
Blocking life
1048
percent rated VR.
Electrical measurement
See table I, subgroup 2.
Subgroup 4
Thermal impedance curves
Subgroup 5
VR = rated VRWM (see 1.3, col. 2); pressure = 33 mmHg; t
Insulation resistance
1016
5 devices
= 1 minute (minimum), RISO = 2.0 x 106 Ω maximum.
c=0
Subgroup 8 1/
n = 45
4065
Peak reverse power (PRM ) = shall be characterized by the
Peak reverse power
supplier and this data shall be available to the
Government. Test shall be performed on each sublot.
Subgroup 9 2/
n = 45
Resistance to glass cracking
1057
Test condition B. Step stress to destruction by increasing
cycles or up to a maximum of 25 cycles.
Subgroup 10
22 devices
c=0
Forward surge
4066
Condition A, IFSM = rated IFSM (see 1.3, col. 5); ten surges
of 8.3 ms each at 1 minute intervals, IO = 0, VRWM = 0.
Electrical measurement
See table I, subgroup 2.
1/ The sample size for this step stress requirement shall be determined by the supplier. A statistically significant
sample size is required.
2/ Also applies US suffix versions.
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